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Your cart is empty.MBQ60T65PES is an insulated gate bipolar transistor (IGBT) with the following specific parameters: 1 Dissipative power (PD): At a shell temperature (Tc) of 25 ℃, the dissipated power is 428W. 2. Collector current (IC): When the collector temperature (Tc) is 100 ℃, the collector current is 60A. 3. Collector emitter voltage (VCES): 650V. 4. Collector emitter saturation voltage (VCE (sat)): When the collector current (Ic) is 60A, it is 2.4V High Speed Switching & Low Power Loss VCE(sat) = 1.85V @ IC = 60A Eoff = 0.53mJ @ TC = 25°C High Input Impedance trr = 110ns (typ.) @diF/dt = 500A/ μs Maximum Junction Temperature 175°C
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2025-07-20 17:38:41
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