Shopping Cart

Your cart is empty.

Your cart is empty.

Chanzon MPSA13 TO-92 NPN Darlington Power Bipolar Junction Transistor (Pack of 100pcs)

Free shipping on orders over $29.99

$6.99

$ 2 .99 $2.99

In Stock

1.Style:Tip120


  • Transistor Type: High-performance NPN Darlington Bipolar Junction Transistor.
  • Transistor Polarity: NPN type for advanced amplification and switching applications.
  • Specification: Features a PD of 1.5W, IC of 0.5A, VCEO and VCBO of 30V, VEBO of 10V, and hFE of ≥5000.
  • Application: Ideal for a variety of electronic circuits including power supplies, motor controls, and more.
  • Package: Pack of 100pcs in an anti-static bag that offers ESD protection, ensuring safe storage and extended shelf life.


Product Description:
The MPSA13 is a high-performance Darlington Transistor in an NPN configuration, designed for applications requiring high voltage and power handling capabilities. Ideal for use in amplifiers, switches, and many other electronic circuits.
Key Features:
- Darlington Configuration for enhanced voltage gain
- Maximum Collector Current (IC): 0.5 A
- Collector Power Dissipation (PC): 625 mW
- Junction Temperature (Tj): up to 150℃
- Storage Temperature: -55℃ to +150℃
Electrical Characteristics:
- Collector-Base Breakdown Voltage (V(BR)CBO): 30 V
- Collector-Emitter Breakdown Voltage (V(BR)CEO): 30 V
- Emitter-Base Breakdown Voltage (V(BR)EBO): 10 V
- DC Current Gain (hFE): 5000 to 10000
- Collector-Emitter Saturation Voltage (VCE(sat)): 1.5 V at IC=100mA
- Base-Emitter Voltage (VBE): 2.0 V at VCE=5V, IC=100mA
- Current Gain-Bandwidth Product (fT): 125 MHz
Thermal Resistance:
- Thermal Resistance from Junction to Ambient (RθJA): 200 ℃/W
Operational Conditions:
- Operating Junction Temperature: -55℃ to 150℃
- Ambient Temperature (Ta): 25℃ for typical characteristics
Physical Dimensions:
- Package: TO-92
- Outline Dimensions: 1.270mm x 0.050mm (typical)
Static Characteristics:
- Base Current (IB) at IC=0.3uA: varies with VCE
- Collector Current (IC) at VCE=5V: varies with temperature
Typical Characteristics:
- DC Current Gain (hFE) at f=1MHz: varies with IC
- Collector-Emitter Saturation Voltage (VCEsat) at VCE=5V: varies with temperature and IC
- Base-Emitter Voltage (VBE) at IC: varies with temperature


Jose M Moreno
August 23, 2025
Ok
James S.
August 11, 2025
I’ve built a couple pedals with the transistors from the pack and I am pleased with them. Good quality.
VoraciousReader
August 5, 2025
Fast shipping. Item exactly as described.
Customer
June 26, 2025
Product seems to be “as described” But the second day delivery promise Was way off base. Had to continue with the project using another device because I could not wait
Teddy W. Preston
May 31, 2025
Arrive in excellent conditions after going through USA custom. Excellent response from manufacturer. Couldn’t ask for more!
Robin Carf
May 25, 2025
I use them to build a board for my rgb led light system for my 3d printrr
richard a billings
April 28, 2025
Arrived quickly and worked perfectly for my project.
Denis richer
April 2, 2025
Excellent
Kunde
April 1, 2025
günstig
lionello
March 26, 2025
perfetti funzionanti ok
Bedatec
February 8, 2025
Funktionieren und kamen in erträglicher Zeit an.
pipiiri
January 17, 2025
je l'ai utilisé pour réparer un rétroprojecteur.