Your cart is empty.
Your cart is empty.
Product Description:
The MPSA13 is a high-performance Darlington Transistor in an NPN configuration, designed for applications requiring high voltage and power handling capabilities. Ideal for use in amplifiers, switches, and many other electronic circuits.
Key Features:
- Darlington Configuration for enhanced voltage gain
- Maximum Collector Current (IC): 0.5 A
- Collector Power Dissipation (PC): 625 mW
- Junction Temperature (Tj): up to 150℃
- Storage Temperature: -55℃ to +150℃
Electrical Characteristics:
- Collector-Base Breakdown Voltage (V(BR)CBO): 30 V
- Collector-Emitter Breakdown Voltage (V(BR)CEO): 30 V
- Emitter-Base Breakdown Voltage (V(BR)EBO): 10 V
- DC Current Gain (hFE): 5000 to 10000
- Collector-Emitter Saturation Voltage (VCE(sat)): 1.5 V at IC=100mA
- Base-Emitter Voltage (VBE): 2.0 V at VCE=5V, IC=100mA
- Current Gain-Bandwidth Product (fT): 125 MHz
Thermal Resistance:
- Thermal Resistance from Junction to Ambient (RθJA): 200 ℃/W
Operational Conditions:
- Operating Junction Temperature: -55℃ to 150℃
- Ambient Temperature (Ta): 25℃ for typical characteristics
Physical Dimensions:
- Package: TO-92
- Outline Dimensions: 1.270mm x 0.050mm (typical)
Static Characteristics:
- Base Current (IB) at IC=0.3uA: varies with VCE
- Collector Current (IC) at VCE=5V: varies with temperature
Typical Characteristics:
- DC Current Gain (hFE) at f=1MHz: varies with IC
- Collector-Emitter Saturation Voltage (VCEsat) at VCE=5V: varies with temperature and IC
- Base-Emitter Voltage (VBE) at IC: varies with temperature