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Your cart is empty. Fifth GenerationPower MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Maximum Continuous Drain Current:18 A
Maximum Drain Source Voltage:200V
Maximum Drain Source Resistance:150 mΩ
Maximum Gate Threshold Voltage:4V
Maximum Gate Source Voltage:-20 V, +20 V
Maximum Power Dissipation:150 W
Maximum Operating Temperature:+175 °C
Minimum Operating Temperature:-55 °C
Height :8.77mm
Package include:
10pcs*IPF640NPBF
Jeffrey J Herdt
August 28, 2025
The device was packaged well, no oxidation on solderable lead surfaces. Exact pinout as original made it just that much easer to replace. Will purchase others parts in future. Quick delivery , good service.
Shawn Shavor
July 10, 2025
worked as stated
Sarg
March 24, 2025
Good product and very fast shipping.
NTP
March 2, 2025
These were meant to replace existing IRF640 FETs is a DC - AC converter.The original FETs were bent, and the legs fell off.The IRF640 rating is 200V, and in this use-case the supply is 160V.But the replacement FETs all had a measured breakdown voltage of 130V, well below spec.This resulted in catastrophic failure of the FETs and neighbouring components.Replacements from a different vendor worked fine.
Bass head
January 29, 2025
Is as described
Michael Redding
January 10, 2025
Works as expected. Good quality.
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