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Your cart is empty. These N-Channel enhancement mode power field effect transistors are produced proprietary,planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Maximum Continuous Drain Current:50A
Maximum Drain Source Voltage:60V
Maximum Drain Source Resistance:21 mΩ
Minimum Gate Threshold Voltage:1V
Maximum Gate Source Voltage:-20 V, +20 V
Maximum Power Dissipation:121 W
Minimum Operating Temperature:-55 °C
Maximum Operating Temperature:+175 °C
Package include:
10pcs*FQP50N06
Fishing1
July 16, 2025
No issues with these transistors
Sarah Forbes
June 10, 2025
Great product working on a old school hifonics car amplifier got the power supply back up and running know just waiting on the outputs fets
Marty
April 18, 2025
Junk! China Rip off's DO NOT BUY! Can't even get a refund!
Eusebio
January 11, 2025
Very good quality thanks
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