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Your cart is empty. Specification:
Transistor type: NPN
Mounting type: Through Hole
Max current collector ic: 600 mA
Max current collector cutoff: 10 nA
Max voltage collector emitter breakdown: 40 V
Max power: 625 mW
Frequency transition: 300 MHz
Max vce saturation ib, ic: 1V 50 mA, 500 mA
Min DC current gain, hFE, Ic, vce: 100-150 mA, 10 V
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